Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

•Appropriate dose of the p gate in the SIT is need for higher breakdown voltage than 100V and good forward characteristics.•The lateral spreading factor was about 0.5 for the p gate implanted higher than 1MeV.•The lateral spreading detrimentally affected the electrical properties of the SIT.