Process Informed Accurate Compact Modelling of 14-Nm FinFET Variability and Application to Statistical 6T-SRAM Simulations
2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)（2016）
Key words
design technology co-optimization,FinFET,process,process variation,SRAM,statistical variability
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined