Suspended Ge Gate-All-around Nanowire Nfets with Junction Isolation on Bulk Si

Chia-Chen Wan,Guang-Li Luo,Shu-Han Hsu, Kuo-Dong Hung,Chun-Lin Chu,Tuo-Hung Hou, Chun-Jun Su,Szu-Hung Chen,Wen-Fa Wu,Wen-Kuan Yeh

2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)（2016）

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GeOI,Ge-on-insulator,dislocation-free channel,high-mobility surface,electrostatics,nNWFET,GAA,FinFET,junction isolation leakage,suspended Ge gate-all-around nanowire nFET,Ge-Si

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