Excimer laser irradiation of AMFC polycrystalline Si thin films

In general, the rms roughness of excimer laser annealing (ELA) poly-Si is 200 similar to 500 angstrom and solid phase crystallization (SPC) has too many defects. In order to overcome these weak points, we used on excimer laser to irradiate alternative magnetic field crystallization (AMFC) poly-Si. Our results showed that the rms roughness of two-step annealed poly-Si was reduced to 88 angstrom. When we compared the two-step poly-Si with normal AMFC poly-Si, we confirmed that the number of defects induced by excimer laser irradiation of after annealed AMFC poly-Si, was decreased and that the grain size of the two-step poly-Si was larger than that of the AMFC poly-Si. The processed films were characterized using optical microscopy, ultraviolet-visible spectroscopy (UV spectroscopy), atomic force microscopy (AFM), Field Emission Scanning Electron Microscopy (FE-SEM) and transmission electron microscopy (TEM).