Analysis of Oxide Trap Characteristics by Random Telegraph Signals in Nmosfets with HfO 2 -Based Gate Dielectrics
IEEE electron device letters（2016）
Key words
Random telegraph signal (RTS),HfO2,Hf1-xZrxO2,multiphonon emission theory,relaxation energy,metal-oxide-semiconductor field-effect transistors (MOSFETs)
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