High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs
SEMICONDUCTOR SCIENCE AND TECHNOLOGY（2016）
关键词
fluorine plasma treatment,normally-off,Al2O3/AlGaN/GaN,power HEMT,threshold swing,high-temperature threshold stability
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要