Research on the Gas Effect of Octafluorocyclobutane Plasma Jet at Atmospheric Pressure for Silicon Etching
IEEE Transactions on Plasma Science(2019)
摘要
The capacitively coupled radio frequency double-pipe plasma discharge jet is used for the etching process. An argon carrier gas is fed through the atmospheric-pressure plasma source; octafluorocyclobutane (C
4
F
8
) etch gas is injected into the plasma. Etchings were carried out on a crystalline silicon substrate. The etching characteristics are discussed and the etch rate tendency shows the reliance of C
4
F
8
gas flow rate and oxygen addition. The optimum etching rate of
$7.2~\mu \text{m}$
/min was obtained at a plasma power level of 100 W and C
4
F
8
gas flow rate was 250 sccm. From surface profile detection, it displays the etch profile under this atmospheric-pressure plasma jet treatment. This plasma technique could offer a breakthrough for chamber-free dry etching processing.
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关键词
Etching,Atmospheric-pressure plasmas,Silicon,Argon,Plasma jets,Discharges (electric)
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