Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer

We demonstrate flexible organic/inorganic hybrid thin-film transistors (TFTs) on a polydimethysiloxane (PDMS) elastomer substrate. The active channel and gate insulator of the hybrid TFT are composed of In-Ga-Zn-O (IGZO) and blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] with poly(methyl methacrylate) (PMMA), respectively. It has been confirmed that the fabricated TFT display excellent characteristics: the recorded field-effect mobility, sub-threshold voltage swing, and Ion/Ioff ratio were approximately 0.35 cm(2) V-1 s(-1), 1.5 V/decade, and 10(4), respectively. These characteristics did not experience any degradation at a bending radius of 15 mm. These results correspond to the first demonstration of a hybrid-type TFT using an organic gate insulator/ oxide semiconducting active channel structure fabricated on PDMS elastomer, and demonstrate the feasibility of a promising device in a flexible electronic system.