Parametric Instability in a Nanoelectromechanical Detector of Modulated Terahertz Radiation on the Basis of a High Electron Mobility Transistor with a Mobile Elastic Gate

Parametric instability in a modulated terahertz radiation detector based on a high electron mobility transistor with a mobile elastic gate fabricated from a conductor in the form of a micronanocantilever is studied in detail. The analysis is based on the method of coupled oscillations and subsequent testing by direct numerical integration of the original equations. The thresholds and increments of the instability are determined. The feasibility of practical realization of conditions for parametric instability in such detectors is discussed.