Reliability analysis of hybrid spin transfer torque magnetic tunnel junction/CMOS majority voters.
Microelectronics Reliability(2016)
摘要
Majority voters are typically used in redundancy hardening techniques aiming to increase the reliability of nanoscale circuits. Besides, Spin Transfer Torque Magnetic Tunnel Junction (STT-MJT) has been identified as the most promising candidate for low power and high speed applications. In this paper, we present two majority voter circuits based on nanometer STT-MTJ. By using STMicroelectronics FDSOI 28nm process and a precise STT-MTJ compact model, electrical simulations have been carried out to compare their performances and analyze their reliability. Both radiation sensitivity and variability have been investigated in the reliability-aware analysis.
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Metal Gate Transistors
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