Diffusion Study of 15 N Implanted into Α-Ti Using the Nuclear Resonance Technique
Applied physics A, Materials science & processing(2007)
摘要
The diffusion of 15N in α-Ti was studied in the 673–1023 K temperature range by using the ion implantation and nuclear resonance techniques. The measurements show that the diffusion coefficients follow an Arrhenius behavior D(T)=D0 -Q/RT, where D0=(1.1±0.8)×10-7 m2 s-1 and Q=(183±2) kJ/mol. A comparison with previous results is also given.
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关键词
Impurity Level,Arrhenius Behavior,Tantalum Foil,Substitutional Case,Total Annealing Time
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