Application-aware solid-state drives (SSDs) with adaptive coding

VLSIC(2014)

Cited 16|Views5
No score
Abstract
Application-aware solid-state drives (SSDs) with 2 adaptive coding schemes to improve reliability are presented. In NAND flash memory, a direct reliability trade-off exists between write/erase (W/E) cycle and data-retention (DR) time. Thus, SSDs can be used for applications that have long DR time and low W/E cycles, or short DR time with high W/E cycles. The n-out-of-8 level cell (nLC) scheme is proposed for low-cost, long-term, archive storage which is indispensable to preserve human digital data. nLC eliminates the memory states of the Triple-Level Cell (TLC) NAND flash memory from 8 to 7...4 levels. Universal asymmetric coding (UAC) is also proposed for cloud/security camera/enterprise storage environments which require high endurance but shorter DR time. Both nLC and UAC optimize coding based on the applications' required W/E cycle and DR. Bit-error rates (BERs) are improved by 79% and 52% with nLC and UAC, respectively.
More
Translated text
Key words
NAND circuits,adaptive codes,flash memories,integrated circuit reliability,BERs,SSDs,TLC,UAC optimize coding,adaptive coding scheme,application-aware solid-state drives,bit-error rates,cloud-security camera-enterprise storage environments,data-retention time,direct reliability trade-off,human digital data,long DR time,low W-E cycle,low-cost long-term archive storage,memory states,n-out-of-8 level cell scheme,nLC scheme,triple-level cell NAND flash memory,universal asymmetric coding,write-erase cycle,
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined