Characterization of heavily doped SOI wafers under pseudo-MOSFET configurationFrankie Y Liu,A Diab,I Ionica,K Akarvardar,Chris Hobbs,Thierry Ouisse,X Mescot,Sorin CristoloveanuSolid-State Electronics（2013）引用 21|浏览8暂无评分关键词Ψ-MOSFET,Heavily doped SOI,Four-point probe,Hall effectAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
