Critical Process Temperatures for Resistive InGaAsP/InP Heterostructures Heavily Implanted by Fe or Ga Ions

Andre Fekecs,Martin Chicoine,Bouraoui Ilahi,Anthony J. SpringThorpe,Francois Schiettekatte,Denis Morris,Paul G. Charette,Richard Ares

Nuclear instruments and methods in physics research Section B, Beam interactions with materials and atoms/Nuclear instruments & methods in physics research Section B, Beam interactions with materials and atoms（2015）

引用 4|浏览14

暂无评分

关键词

III-V semiconductors,Ion implantation,Primary and secondary defects,Hall effect,X-ray diffraction

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要