High-performance GaAs-based metal–oxide–semiconductor heterostructure field-effect transistors with atomic-layer-deposited AlTakeshi Aoki,Noboru Fukuhara,Takenori Osada,Hiroyuki Sazawa,Masahiko Hata,Takayuki InoueApplied Physics Express(2014)引用 23|浏览9暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要