Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V

This letter presents the dc characteristics of normally Off AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs). The devices were fabricated using a recessed gate and SiON dielectric layers for gate isolation. For a device with a 1.5 mu m gate length and an 8-mu m-long channel, the threshold voltage was above +1.5V and a maximum drain current density of 0.7A/mm was reached under 6V gate bias. These enhancement-mode MOS-HFETs have an excellent potential for power electronics applications. (C) 2011 The Japan Society of Applied Physics