Resistivity Anisotropy Measured Using Four Probes in Epitaxial Graphene on Silicon Carbide

The electronic transport of epitaxial graphene on silicon carbide is anisotropic because of the anisotropy of the surface structure of the substrate. In this Letter, we present a new method for measuring anisotropic transport based on the van der Pauw method. This method can measure anisotropic transport on the macroscopic scale without special equipment or device fabrication. We observe an anisotropic resistivity with a ratio of maximum to minimum of 1.62. The calculated maximum mobility is 2876 cm(2).V-1.s(-1), which is 1.43 times higher than that obtained by the standard van der Pauw method. (C) 2015 The Japan Society of Applied Physics