Characterisation of a Thin Fully Depleted SOI Pixel Sensor with Soft X-ray Radiation

M Battaglia,D Bisello,Richard Celestre,Devis Contarato,P Denes,S Mattiazzo,C S Tindall

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment（2012）

引用 14|浏览19

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摘要

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-on-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a low energy phosphorus implantation is performed on the back-plane. The response to X-rays from 2.12 to 8.6keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.

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关键词

Monolithic pixel sensor,SOI,CMOS technology,X-ray detection

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