Instantaneous Characteristics of MOS Structures

A simple, rapid experimental method is proposed for obtaining the parameters of each MOS device from the profile of the derived curve dCn/dVg of the capacitance-voltage characteristic, which is closely correlated to the level of disorder existing in the I-S interfacial region. A simple reading of the experimental graphs provides the information allowing the systematic, instantaneous characterization of the devices at the time of manufacture or immediately after stress (electron irradiation, temperature).