High-Field Splitting Of The Cyclotron Resonance Absorption In Strained P-Ingaas/Gaas Quantum Wells

PHYSICAL REVIEW B(2009)

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摘要
We report a systematic study of the cyclotron resonance (CR) absorption of two-dimensional holes in strained InGaAs/GaAs quantum wells (QWs) in the quantum limit. The energies of the CR transitions are traced as a function of magnetic field up to 55 T. A remarkable CR line splitting was evidenced when the resonant field exceeds 20 T. We analyze our data with a 4x4 Luttinger Hamiltonian including strain and QW potentials using two different methods to calculate Luttinger parameters for ternary alloys. We found excellent agreement with the experiment when linear interpolation of the Luttinger parameters is used.
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关键词
cyclotron resonance, gallium arsenide, III-V semiconductors, indium compounds, semiconductor quantum wells, two-dimensional hole gas
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