P‐1: Distinguished Poster: Fabrication of a Self‐Aligned ZrInZnO Thin‐Film Transistor Using Polypropylene Carbonate Solution

AbstractTo fabricate a self‐aligned oxide semiconductor thin‐film transistor (TFT) using a solution process, we developed a novel diffusion method to dope ZrInZnO source and drain regions. In this method, Sn was allowed to diffuse into ZrInZnO from a solution of Sn mixed with polypropylene carbonate. The sheet resistance of the Sn‐containing ZrInZnO was reduced dramatically from 1 MΩ/□ to 6.8 KΩ/□. The self‐aligned ZrInZnO TFT exhibited a mobility of 20 cm2•V−1•s−1, a threshold voltage of 1 V, a subthreshold swing of 0.2 V/decade, and an on‐to‐off current ratio of 7.