Understanding advanced lithographic materials: challenges and new characterization techniques

The implementation of new resist materials and advanced lithography processes requires new characterisation techniques in order to understand the behaviour of these systems and optimise their design. Examples are presented on two recent 193 nm experimental formulations using three different characterisation techniques, namely Modulated-Temperature DSC (MT-DSC), in-situ Ellipsometry and DiElectric Analysis (DEA). The results obtained provide new experimental evidence of the diffusion and reaction mechanisms involved in chemically amplified formulations.