Fabrication of a−Si:H/a−Al1−xOx Superlattice by Excimer Laser MOCVD and its Properties

a−Si:H/a−A11−xOx superlattice structures have been fabricated by ArF excimer laser MOCVD. Periodic variation of composed elements in multilayers with quite uniform layer thickness was clearly shown by SIMS analysis. Optical band gap was increased with the decrease of the well layer thickness, indicating the quantum size effect. With the advantage of the inherent digital process, very sharp interface was obtained, which was confirmed by both XPS and cross sectional TEM analyses.