A self heating test structure using poly resistors and P/sup +//N diodes to characterize anomalous charge transfers in embedded flash memories

We report on the characterization of a self heating test structure which allows the monitoring of charge loss or gain of embedded flash memories with a high level of time accuracy. A calibration of the test structure has been successfully performed between 25/spl deg/C and 300/spl deg/C. Furthermore, voltage and current operating points were determined in order to obtain the self heating structure temperature profile needed for charge transfer studies. Finally, data retention results of flash memories were presented to validate the operating of the structure. Considering the results, the monitoring of charge transfers appears as a powerful application.