Minimization of the Iso-Dense Bias in Chemically Amplified 193 Nm Positive Resists: Influence and Monitoring of the Diffusion Well
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE（2000）
Key words
Iso-Dense bias,193 nm single layer resists,diffusion well,glass transition temperature,free volume shrinkage
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