Formation of Latent Images and Resist Profiles in the DESIRE Process

The silylated image and etched profiles in the DESIRE process are simulated and compared with experimental results. The simulations show sioped silylated profiles, due to the finite contrast of both the aerial image and the silylation. As a consequence the etched profiles are positively sloped and the linewidth changes in the course of the etch process. Experimental results reveal that the slopes of the silylated areas are even worse than simulated. This is attributed to lateral swelling and lateral transport of the silylating reagent. In accordance with the simulation the linewidth decreaseS during etching. The sidewall angles, however, remain near-vertical despite the worse slope in the silylated profiles.