Physical and Electrical Properties of MOCVD and ALD Deposited HfZrO4 Gate Dielectrics for 32nm High Performance Logic CMOS SOI Technologies
Torben Kelwing,Andreas Naumann,Martin Trentzsch,S Mutas,Bernhard Trui,Lutz Herrmann,Falk Graetsch,Christoph Klein,Lutz Wilde,Susanne Ohsiek,Martin Weisheit,A Peeva,Inka Richter,Hartmut Prinz,Alexander Wuerfel,Richard Carter,Rolf Stephan,Peter Kucher,Walter Hansch mag（2010）
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