Use of Eeprom-Based Sensors in Investigating Physical Mechanisms Responsible for Charging Damage
wos(2002)
摘要
Wafer charging damage in IC process equipment is the result of complex interactions between the wafer environment and the wafer. EEPROM-based sensors have been used recently to quantify the UV and charging characteristics of process tools, and to examine the interactions between the wafer environment and the wafer. This paper discusses these topics, relates them to charging damage, and illustrates them with examples from experiments performed in different process tools.
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关键词
charging damage,charging monitors,ion implantation,plasma,CHARM-2
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