Optimizing ULK film properties to enable BEOL integration with TDDB reliability

E Todd Ryan, Deepika Priyadarshini,Stephen M Gates, H Shobha, Jixin Chen,Kumar Virwani,A Madan,E Eric Adams,Elbert Huang,E Liniger, D W Collins,M Stolfi,K S Yim,Alexandros T Demos,A Grill

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)（2015）

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关键词

ULK film properties,BEOL integration,TDDB reliability,circuit density,multilevel back-end-of line interconnects,BEOL interconnects,ultra low-k dielectrics,power consumption,capacitance-resistance performance,materials pose integration,dielectric constant,carbon content,porous SiCOH films,plasma-induced damage,PID,elastic modulus,low porosity,SiCOH

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