High Voltage Operation of Heavily Irradiated Silicon Microstrip Detectors
mag(2007)
摘要
We discuss the results obtained from the R&D studies, done within the CMS experiment at LHC, related to the behaviour of silicon microstrip prototype detectors when they are operated at high bias voltages, before and after having heavy irradiation, simulating up to 10 years of LHC running conditions. We have found detectors from several manufacturers that are able to work at Vbias > 500 V before and after the irradiation procedure, maintanining an acceptable performance with S=N > 14, efficiency close to 100% and few ghost hits. Presented at 6th Intern. Conf. on Advanced Technology and Particle Physics , Como, 5-9 october, 1998 Submitted to Nucl. Phys. B Proc. Suppl. a) corresponding author: E-mail leonello.servoli@pg.infn.it, Dipartimento di Fisica, via Pascoli I-06100 Perugia, ITALIA
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