Impacts of an Intrinsic A-Si Buffer Layer Between the P-Type Nc-Si Layer and the Intrinsic A-Sige Layer in Single Junction Solar Cells
Photovoltaic Specialists Conference（2011）
关键词
Ge-Si alloys,elemental semiconductors,energy gap,numerical analysis,solar cells,AMPS computer model,Penn State University,SiGe,Voc,analysis of microelectronic and photonic structures,bandgap effects,buffer layer thickness,conversion efficiency,electron volt energy 1.4 eV to 1.55 eV,experimental investigation,fill factor,intrinsic a-silicon buffer layer,numerical modeling,open circuit voltage,p-type nc-silicon layer,single junction solar cell,single junction solar cells,wide-bandgap buffer layer
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