An analytical model for the photodetection mechanisms in high-electron mobility transistors

Romero, M.A.,M. A. G. Martinez, Herczfeld, P.R.

IEEE Transactions on Microwave Theory and Techniques（1996）

Cited 111|Views2

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Abstract

The use of microwave high-electron mobility transistors (HEMTs) as photodetectors or optically controlled circuit elements have attracted interest. A model of the optical characteristics of HEMTs, which takes into account carrier transport as well as the quantum mechanical nature of the two-dimensional (2-D) electron gas channel, is presented. It is shown that the effect of illumination is equivalent to a shift in the gate to source bias voltage, referred to as the internal photovoltaic effect. The theoretical model is supported by experimental results that demonstrate that the HEMT photoresponse is a nonlinear function of light intensity with very high responsivity at low optical power levels

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Key words

frequency response,high electron mobility transistors,microwave field effect transistors,photodetectors,semiconductor device models,two-dimensional electron gas,2D electron gas channel,2DEG,HEMT photoresponse,analytical model,carrier transport,high-electron mobility transistors,illumination effect,internal photovoltaic effect,light intensity,microwave HEMT,nonlinear function,optical characteristics,optically controlled circuit elements,photodetection mechanisms,photodetectors,two-dimensional electron gas

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