Electrical Characteristics of Metal/High-k MOS Devices Using Effective Oxygen Control for Sub-1nm EOT

K. Okamoto,K. Kakushima,P. Ahmet,K. Tsutsui,N. Sugii,A. N. Chandorkar,T. Hattori,H. Iwai

ECS Transactions（2008）

引用 7|浏览2

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摘要

In this paper, we have studied the mechanism of equivalent oxide thickness (EOT) growth after annealing using oxygen diffusion model from W gate electrode. It has been revealed that proper thickness W insertion into metal/high-k interface and TaSi2 capping layer could depress EOT growth after post metallization annealing and achieve small Capacitance-Voltage (CV) hysteresis.

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