Properties of Heteroepitaxial 3C-SiC Layer on Si Using Si 2 (CH 3) 6 by CVD
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999（2011）
关键词
single crystal,microstructures,raman scattering,room temperature,nitrogen,schottky diode
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