THREE-DIMENSIONAL SILICON-BASED TRANSISTOR COMPRISING A HIGH-MOBILITY CHANNEL FORMED BY NON-MASKED EPITAXYStefan Flachowsky,Ralf Illgen,Jan Hoentschelmag(2014)引用 22|浏览1暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要