Lateral Uniformity of the Transport Properties of Graphene/4h-Sic (0001) Interface by Nanoscale Current Measurements
MRS Online Proceedings Library(2011)
摘要
Conductive Atomic Force Microscopy was applied to study the lateral uniformity of current transport at the interface between graphene and 4H-SiC, both in the case of epitaxial graphene (EG) grown on the Si face of 4H-SiC and in the case of graphene exfoliated from HOPG and deposited (DG) on the same substrate. This comparison is aimed to investigate the role played by the C-rich buffer layer present at EG/4H-SiC interface and absent in the case of DG/4H-SiC. The distribution of the local Schottky barrier heights at EG/4H-SiC interface (Φ EG ) was compared with the distribution measured at DG/4H-SiC interface (Φ DG ), showing that Φ EG (0.36±0.1eV ) is ˜0.49eV lower than Φ DG (0.85 ± 0.06eV). This difference is explained in terms of the Fermi level pinning ˜0.49eV above the Dirac point in EG, due to the presence of positively charged states at the interface between the Si face of 4H-SiC and the buffer layer.
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关键词
Graphene
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