ESD gated diode SPICE compact model

Zhenghao Gan,An Zhang,Waisum Wong,Lifei Zhang,Haohua Ye,Chien-Lung Tseng

2015 China Semiconductor Technology International Conference（2015）

引用 0|浏览9

暂无评分

摘要

A physics-based new gated diode SPICE compact model is provided considering the following two effects: (1) the leakage current under reverse bias of gated diode caused by the gate/diffusion overlap tunneling current; (2) the substrate conductivity modulation associated with high injection of carriers due to mobility saturation during high current transmission line pulse (TLP). The new SPICE model matches the silicon data under both ESD TLP and normal DC forward/reverse bias very well. The model is scalable in terms of finger width and number.

查看译文

关键词

ESD gated diode,SPICE compact model,Si,normal DC forward-reverse bias,silicon data,TLP,transmission line pulse,mobility saturation,carrier injection,substrate conductivity modulation,gate-diffusion overlap tunneling current,leakage current,physics-based new gated diode

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要