Gate electrodes of a semiconductor device formed by a hard mask and double exposure in combination with a shrink spacer Sven Beyer,Andreas Hellmich,Steffen Laufer, Klaus Gebauermag(2014)引用 24|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要