Current imaging technique with nanometer resolution for failure analysis of metal layers

Sajal Biring,Chihfeng Chiang,Chiahsiang Yen,Chihhsun Chu

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits（2015）

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摘要

Failure analysis of metal layers (open or short) in semiconductor industry is performed primarily by OBIRCH, thermal imaging, and SQUID technology which show resolution of few microns, only. Here, we present a current imaging technique to isolate the fault by biasing part of the metal lines with AFM tips and scanning another conductive AFM tip in the interested area. The collected current image is capable of isolating failure location in the nanometer regime.

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关键词

imaging technique,nanometer resolution,failure analysis,metal layers,semiconductor industry,OBIRCH,thermal imaging,SQUID technology,atomic force microscopy imaging,AFM,failure location

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