Large-Area Broad Band Saturable Bragg Reflectors Using Oxidized Alas In The Circular And Inverted Mesa Geometries

A semiconductor Saturable Bragg Reflector (SBR) is a mirror structure comprising alternating layers of high and low refractive index materials with an incorporated saturable absorber. SBRs can be used to initiate and sustain ultra-short pulses in various laser systems. In order to form ultrashort pulses, SBRs with high reflectivity over a broad wavelength range are required. Furthermore, large-area SBRs facilitate easy integration in a laser cavity. One of the key elements for the realization of broad band SBRs is the development of the thermal oxidation process that creates buried low-index AlxOy layers over large areas. The design, fabrication, characterization, and implementation of broad band, high index contrast III-V/AlxOy SBRs in the form of circular mesas, as well as inverted mesa structures, is presented. (C) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.