Extremely Low Nonalloyed Specific Contact Resistance Rho-C (10(-8) Omega Cm(2)) To Metalorganic Molecular-Beam Epitaxy Grown Super Heavily Heavily C-Doped (10(21) Cm(-3))Rho++Gaas
JOURNAL OF APPLIED PHYSICS（1991）
关键词
two dimensional electron gas,gallium arsenide,bipolar transistor,contact resistance,molecular beam epitaxy,transmission line,heterojunction bipolar transistor,electric conductivity
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