Temperature dependence of avalanche gain in Al<inf>0.85</inf>Ga<inf>0.15</inf>As<inf>0.56</inf>Sb<inf>0.44</inf> APD

S. Xie, X. Zhou,S. Zhang,J. S. Ng,C. H. Tan

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)（2016）

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Temperature dependence of avalanche gain in Al&lt;inf&gt;0.85&lt;/inf&gt;Ga&lt;inf&gt;0.15&lt;/inf&gt;As&lt;inf&gt;0.56&lt;/inf&gt;Sb&lt;inf&gt;0.44&lt;/inf&gt; APD

Temperature dependence of avalanche gain in Al<inf>0.85</inf>Ga<inf>0.15</inf>As<inf>0.56</inf>Sb<inf>0.44</inf> APD