Effect of Device Variants in 32 nm and 45 nm SOI on SET Pulse Distributions

Maharrey, J.A.,Quinn, R.C.,Loveless, T.D.,Kauppila, J.S.,S Jagannathan,N M Atkinson,N J Gaspard,En Xia Zhang,M L Alles,B L Bhuva,W T Holman,L W Massengill

Nuclear Science, IEEE Transactions（2013）

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摘要

Single-Event Transient (SET) pulse widths were obtained from the heavy-ion irradiation of inverters designed in 32 nm and 45 nm silicon-on-insulator (SOI). The effects of threshold voltage and body contact are shown to significantly impact the SET response of advanced SOI technologies. Also, the reverse cumulative distribution is extracted from the count distribution for several targets and is shown to be a useful aid in selecting the temporal filtering for radiation-hardened circuitry.

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关键词

elemental semiconductors,logic circuits,logic design,logic gates,radiation hardening (electronics),silicon-on-insulator,SET pulse distributions,SET response,SOI,Si,advanced SOI technology,body contact,device variants,heavy-ion irradiation,inverters,radiation-hardened circuitry,reverse cumulative distribution,silicon-on-insulator,single-event transient pulse widths,size 32 nm,size 45 nm,temporal filtering,threshold voltage,32 nm,45 nm,Body contact,SET,SOI,cumulative cross section,pulse width,single-event transient,threshold voltage

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