Recent progress in GaN HEMT for high-frequency and high-power applications

Masahito Kanamura,Thomas Ohki,Toshihide Kikkawa,K Imanishi, Ken Watanabe,Kazukiyo Joshin

Radio-Frequency Integration Technology（2012）

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摘要

In this paper, we describe the recent progress in GaN HEMT technology for high-frequency and high-power applications. First, we present the GaN HEMT technology for base-station applications. Then, we discuss the current drift phenomena during RF operation. We also present the device technology for normally off GaN HEMTs.

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关键词

iii-v semiconductors,gallium compounds,high electron mobility transistors,wide band gap semiconductors,gan,hemt technology,rf operation,base-station application,current drift phenomena,device technology,high-frequency application,high-power application,gan hemt,normally off,power amplifiers,power devices

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