Experimental/numerical Investigation of Buried-Channel InGaA MOS-HEMTs with Al2O3 Gate Dielectric

Morassi, L.,Verzellesi, G.,Pavan, P.,Veksler, D.

International Conference on Indium Phosphide and Related Materials（2011）

Cited 23|Views4

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Abstract

We analyze the electrical behavior of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric by means of measurements and numerical device simulations, with the aim of pointing out peculiar aspects that can be critical for device design/optimization purposes. Our analysis focuses in particular on effects associated with traps at the dielectric/barrier interface and unintentional doping in the buffer layer, showing their combined impact on crucial device parameters like threshold voltage, subthreshold slope and drain-bias dependence of subthreshold drain current.

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Key words

III-V semiconductors,MOSFET,alumina,buffer layers,buried layers,doping,gallium arsenide,high electron mobility transistors,indium compounds,Al2O3,InGaAs,buffer layer,buried-channel MOS-HEMT,device design,device optimization,dielectric-barrier interface,doping,gate dielectric,numerical device simulation

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