Highly Reliable Enhanced Nitride Interface (ENI) Process of Barrier Low-k Using Absorption-Free Ultra-Thin SiN (Ut-Sin)
2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM)（2011）
关键词
absorption,electromigration,low-k dielectric thin films,silicon compounds,ENI process,UT-SiN,absorption-free ultra-thin SiN,barrier low-k films,electro-migration improvement,enhanced nitride interface process
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