Connecting RRAM Performance to the Properties of the Hafnia-Based Dielectrics
International Electron Devices Meeting（2013）
关键词
dielectric properties,hafnium compounds,optimisation,random-access storage,HfO2,RRAM performance,atomic-level description,bi-polar hafnia-based RRAM,conductive filament,dielectric oxygen deficiency,filament region,hafnia-based dielectrics,ion distribution,localized conductive path,operational-mechanism,optimization,oxygen ions,resistive switching,resistive-RAM,rupture-recreation,utilized-dielectric-properties
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