Characterization of IGBTs for high-speed switches for laser applications
Pulsed Power Conference（2013）
Key words
igbt-chips,scaled circuit,real laser circuit,insulated gate bipolar transistors,high-speed switches,nitrogen,thyratrons,gate boosting,nitrogen gas laser,mos-controlled device,conduction loss,igbt devices,jitter,pulsed power systems,pulse compression,pulsed power switching devices,laser applications,pulsed power applications,equivalent energies approach,mto,gas lasers,conventional gate drive strategy,mos controlled thyristor,characterization strategy,mct,switching loss,voltage slope,power semiconductor switches,thyristor applications,elevated gate voltage,magnetic pulse compression networks,mosfet,igbt,laser beam applications,gate driving method,capacitors,switches,logic gates
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