Reduction of charge transfer region using graphene nano-ribbon geometry for improved complementary FET performance at sub-micron channel length

Matthew J Hollander,Nitin Shukla,Nidhi Agrawal,H Madan,Joshua A Robinson,Soupayan Datta

Device Research Conference（2013）

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摘要

In this work, we investigate the effect of nano-ribbon geometries on graphene device performance and explain its effect on reducing the negative impact of Dirac point shift due to charge transfer into the graphene channel from the metal-graphene contact thereby leading to improved device performance and balanced n, p FET performance at submicron channel lengths.

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关键词

charge exchange,field effect transistors,graphene,nanoribbons,dirac point shift,charge transfer region,complementary fet performance,graphene channel,graphene device performance,graphene nanoribbon geometry,metal-graphene contact,submicron channel lengths,metals,charge transfer,geometry,logic gates

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