Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs

Ali Khakifirooz,Kangguo Cheng,Nicolas Loubet,Toshiharu Nagumo,Alexander Reznicek,Qing Liu,T Levin,Lisa F Edge,Hong He,J Kuss,F Allibert,Bichyen Nguyen,Bruce B Doris,Ghavam G Shahidi

Electron Device Letters, IEEE（2013）

引用 13|浏览56

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摘要

We report experimental data comparing aggressively scaled SiGe channel extremely thin SOI MOSFETs with either relaxed or strained channels. The analysis clearly demonstrates that without strain, SiGe channel delivers performance comparable with relaxed Si devices. Significantly higher performance is observed only in compressively strained SiGe channel devices, especially in narrower devices where the transverse component of the strain is partially relaxed.

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关键词

ge-si alloys,mosfet,hole mobility,internal stresses,semiconductor materials,silicon-on-insulator,sige,compressively strained sige channel devices,extremely thin soi mosfet,hole transport,relaxed sige channel,strain transverse component,extremely thin soi,fully depleted soi,hole velocity,silicon on insulator

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